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| 10N60K-MT Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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10N60K-MT
Preliminary
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID= 250μA
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient âBVDSS/âTJ ID=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, ID=1.3A, VGS=10V
IG=100μA (Note1, 2)
VDD=30V, ID=0.5A, RG=25â¦,
VGS=0V (Note1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
VGS=0V, IS=10A,
Reverse Recovery Charge
QRR
dIF/dt=100A/µs (Note1)
Notes: 1. Pulse Test : Pulse width â¤300µs, Duty cycle â¤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600
V
1 µA
100 nA
-100 nA
0.7
V/°C
2.0
4.0 V
0.63 0.75 â¦
1570 2040 pF
166 215 pF
18 24 pF
33 57 nC
9
nC
8.5
nC
67
ns
84
ns
205
ns
95
ns
1.4 V
10 A
38 A
420
ns
4.2
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-022.h
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