X0202-TO-92 Datasheet, PDF (3/4 Pages) Unisonic Technologies – SCR

UTC X0202/A
SCR
Figure 2-2.Average and D.C. On-state Current
vs.Ambient Temperature(Device Mounted On
FR4 with Recomended Pad Layout)
1.4
1.2
1.0
0.8
D.C.
0.6
0.4
α=180°
0.2
Tlead(℃)
0.0
0
25
50
75
100
125
Figure 4.Relative Variation of Gate Trigger
Current,Holding Current and Latching Current
Versus Junction Temperature (typical values).
1.50 ^{IGT,IH,IL[Tj]/GT,IH,IL[Tj]=25℃}
1.25
1.00
IH&IL
0.75
(Rgk=1kΩ )
0.50
IGT
0.25
Tj(℃)
0.0
-40 -20 0 20 40 60 80 100 120 140
Figure 3. Relative Variation of Thermal
Impedance Junction to Ambient
vs.Pulse Duration
1.0
0.1
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 5.Relative Variation of Holding Current
vs.Gate-cathode Resistance (typical values).
IH[Rgk]/IH[Rgk=1kΩ ]
4.0
3.5
Tj=25℃
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(kΩ )
1E-1
1E+0
1E+1
Figure 6.Relative Variation of dV/dt immunity
vs.Gate-Cathode Resistance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1kΩ ]
10.0
Tj=125(℃)
VD=0.67*VDRM
1.0
0.1
Rgk(kΩ )
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 7.Relative Variation of dV/dt Immunity
vs Gate-cathode Capacitance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1kΩ ]
20
18 Tj=125(℃)
16 ^VD=0.67*VDRM
Rgk=1kΩ )
14
12
10
8
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
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