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| UTT60P03 Datasheet, PDF (3/5 Pages) Unisonic Technologies – -60A, -30V, P-CHANNEL POWER MOSFETS | |||
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UTT60P03
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS=0V
VDS=0.8ÃRated BVDSS, TC=150°C
-1 µA
-50
Gate- Source Leakage
Current
Forward
Reverse
IGSS
VGS=+20V
VGS=-20V
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-2
-4 V
Static Drain-Source On-State
Resistance (Note)
RDS(ON) VGS=-10V, ID=-60A
0.027 â¦
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS VGS=0V, VDS=-25V, f=1.0MHz
3000
pF
1500
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
525
pF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
QG
QG(-10)
QG(TH)
VGS=0 ~ -20V
VGS=0 ~ -10V
VGS=0 ~ -2V
VDD=-24V, IDâ-60A,
RL=0.4â¦, IG(REF)=-3mA
190 230 nC
100 120 nC
7.5 9 nC
Turn-On Time
tON
140 ns
Turn-ON Delay Time
tD(ON)
20
ns
Rise Time
Turn-OFF Delay Time
tR VDD=15V, VGS=-10V, IDâ60A,
tD(OFF) RL=0.25â¦, RG=2.5â¦
75
ns
35
ns
Fall-Time
tF
40
ns
Turn-Off Time
tOFF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
115 ns
Drain-Source Diode Forward Voltage
(Note )
VSD ISD=-60A
-1.75 V
Body Diode Reverse Recovery Time tRR ISD=-60A, ISD/dt=100A/µs
Note: Pulse test: pulse width ⤠300µs, duty cycle ⤠2%.
200 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-605.a
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