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| UTT18P06_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – P-CHANNEL POWER MOSFET | |||
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UTT18P06
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=-250µA, VGS=0V
VDS=-60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current (Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-18.3A (Note 1)
VGS=-10V, VDS=-5V
CISS
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
(Note 2)
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=-10V, VDS=-50V,
ID=-1.3A, IG=100μA (Note 3)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=-30V, ID=-0.5A, RG=2.5â¦
(Note 3)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IF=-18.3A, VGS=0V (Note 1)
Body Diode Reverse Recovery Time
trr
IF=-18.3A, dIF/dt=100A/µs
Notes: 1. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2 %
2. Guaranteed by design, not subject to production testing
3. Independent of operating temperature
MIN TYP MAX UNIT
-60
V
-1 µA
+100 nA
-100 nA
-1
-3 V
0.055 0.070 â¦
-30
A
840 1310 pF
95
pF
70
pF
35 40 nC
6
nC
7.0
nC
50
ns
43
ns
300
ns
95
ns
-18.3 A
-73.2 A
-1.0 -1.5 V
14 61 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-713. D
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