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UTT10NP06 Datasheet, PDF (3/7 Pages) Unisonic Technologies – DUAL ENHANCEMENT MODE (N-CHANNEL/ P-CHANNEL)
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UTT10NP06
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
N-CHANNEL P-CHANNEL
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
60
VGSS
±20
-60
V
±20
V
Drain Current
Continuous TA=25°C
ID
4.5
Pulsed (Note 1)
IDM
20
-3
A
-20
A
Power Dissipation
Junction Temperature
TA=25°C
PD
2.0
W
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
62.5
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
N-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=60V, VGS=0V, TJ=25°C
VDS=48V, VGS=0V, TJ=125°C
VGS=+20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VGS=4.5V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 2)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=4.5V, VDS=48V, ID=4A
VDS=30V, ID=1A, RG=3.3Ω,
VGS=10V, RD=30Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
IS=1.7A, VGS=0V
MIN TYP MAX UNIT
60
V
1 µA
10 µA
+100 nA
-100 nA
1
3V
36 56 mΩ
44 64 mΩ
1100 1500 pF
80
pF
60
pF
120 150 nC
12
nC
60
nC
33
ns
26
ns
140
ns
64
ns
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-773.D
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