UTN3055_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

UTN3055
„ TYPICAL CHARACTERISTICS
On-Resistance Variation with
Temperature
10
T_J=25℃
V_GS=10V
9
8V
8
7
4.5V
6
5
3.0V
4
3
2.5V
2
1
2.0V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-to-Source Voltage, V_GS (V)
0.2
0.18
On-Resistance vs. Gate-to-Source
Voltage
I_D=2.5A
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage,V_GS(V)
Power MOSFET
Transfer Characteristics
10
9 ^VDS≥10V
8
7
6
5
4
T_J=100℃
3
25℃
2
-55℃
1
0
2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4
Gate-to-Source Voltage,V_GS (V)
0.0425
On-Resistance vs. Drain Current and
Gate Voltage
T_J=25℃
0.04
0.0375
0.035
0.0325
0.03
0 1 2 3 4 5 6 7 8 9 10
Drain Current,I_D (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-138.B