UTC654 Datasheet, PDF (3/5 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE

UTC654
„ TYPICAL CHARACTERISTICS
On-Region Characteristics
15
V_GS=-10V -5.0V
12
-6.0V
-4.5V
9
-4.0V
6
-3.5V
3
-3.0V
0
0
1
2
3
4
5
Drain to Source Voltage,-V_DS (V)
Power MOSFET
On-Resistance Variation with Drain
Current and Gate Voltage
2
V_GS=-3.5V
1.8
-4.0V
1.6
-4.5V
1.4
1.2
-5.0V
1
-6.0V
0.8
-7.0V
0.6
-10V
0.4
0
3
6
9
12 15
Drain Current,-I_D (A)
Transfer Characteristics
10
V_DS=-5.0V
T_A=-55℃
25℃
8
125℃
6
4
2
0
1
2
3
4
5
Gate to Source Voltage,-V_GS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Bodt Diode Forward Voltage Variation
with Source Current and Temperature
10
V_GS=0V
1
T_A=125℃
0.1
0.01
25℃
-55℃
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
Body Diode Forward Voltage,-V_SD (V)
3 of 5
QW-R502-153.B