UT4114 Datasheet, PDF (3/4 Pages) Unisonic Technologies – N-CHANNEL JUNCTIN SILICON FET

UT4114
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Q_G
Q_GS
Q_GD
R_G
t_D(ON)
t_R
t_D(OFF)
t_F
V_GS=10V, V_DS=10V, I_D=10A
V_GS=4.5V, V_DS=10V,
I_D=10A
f=1.0MHz
V_DD=10V, R_L=2Ω, I_D≈5A,
V_GEN=4.5V, R_G=1Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
T_C=25°C
Maximum Body-Diode Pulsed Current
(Note 1)
I_SM
Drain-Source Diode Forward Voltage
V_SD I_S=2A
Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
2. Guaranteed by design, not subject to production testing.
MIN
0.15
TYP
62
27.5
8.0
6.0
0.7
30
13
60
30
0.71
MAX UNIT
95 nC
42 nC
nC
nC
1.4
Ω
55
ns
25
ns
100 ns
55
ns
5.1
A
50
A
1.1
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A78.b