UT3N01Z_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE

UT3N01Z
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
±10
V
Drain Current
DC
Pulse(Note 2)
I_D
0.15
A
0.6
A
SOT-23-3
330
Power Dissipation
SOT-323
SOT-523
P_D
200
150
mW
SOT-363
200
Operating Temperature
T_OPR
-40 ~ +85
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≤10μs, Duty cycle≤1%
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS=0V, I_D=1mA
30
Drain-Source Leakage Current
I_DSS
V_DS=30V,V_GS=0V
Gate-Source Leakage Current
I_GSS
V_GS=±8V, V_DS=0V
ON CHARACTERISTICS
Cutoff Threshold Voltage
V_GS(OFF) V_DS=10V, I_D=100µA
0.4
V_GS=4V, I_D=80mA
Static Drain-Source On-Resistance
R_DS(ON) V_GS=2.5V, I_D=40mA
V_GS=1.5V, I_D=10mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_DS=10V, V_GS=0 V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Q_G
Q_GS
Q_GD
t_D(ON)
t_R
t_D(OFF)
t_F
V_DS=10V, V_GS=10V, I_D=150mA
See specified Test Circuit
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V_SD
I_S=150mA, V_GS=0V
TYP
1.3
1.7
5.8
18
11
7.5
5
0.46
0.56
31
19
55
22
0.87
MAX UNIT
V
1 µA
±10 µA
1.3 V
2.0 Ω
3.0 Ω
12.8 Ω
pF
pF
pF
8 nC
nC
nC
35 ns
23 ns
60 ns
28 ns
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-285.I