US104S Datasheet, PDF (3/4 Pages) Unisonic Technologies – SCRs

UTC US104S/N
SCR
Fig.1:Maximum average power dissipation vs
average on-state current
P/W
4.0
α=180°
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
360°
IT(av)(A)
α
1.0
1.5
2.0
2.5
3.0
Figure.3:Relative variation of gate trigger current
and holding current vs junction temperature.
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
1.8
1.6
IGT
1.4
1.2
IH&IL
1.0
Rgk=1kΩ
0.8
0.6
0.4
0.2
Tj(℃)
0.0
-40 -20 0 20 40 60 80 100 120 140
Figure.2:Average and D.C. on-state current
vs case temperature
IT(av)(A)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
DC
α=180°
1.5
1.0
0.5
Tcase(℃)
0.0
0
25
50
75
100
125
Figure.4:Relative variation of holding current vs
gate-cathode vesistance(typical values).
5 ^{IH(Rgk)/IH(Rgk=1kΩ)}
4
Tj=25℃
3
2
1
0
1E-2
Rgk(kΩ)
1E-1
1E+0
1E+1
Fig.5: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.00
Tj=125℃
VD=0.67* VDRM
1.00
0.10
Rgk(Ω)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
10
Tj=125℃
VD=0.67* VDRM
8 _Rgk=220Ω
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
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