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| UHE4913_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – LOW POWER HALL EFFECT SWITCH | |||
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UHE4913
CMOS IC
ï® ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Supply current
VDD
5.5
V
IQ
-1 ~ +2.5
mA
Magnetic Flux Density
B
Unlimited
mT
Junction Temperature
TJ
150
°C
Operation Temperature
Storage Temperature
TOPR
TSTG
-40 ~ +85
°C
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® RECOMMENDED OPERATING CONDITIONS (TA=25°C)
PARAMETER
Supply Voltage
Output Voltage
Ambient Temperature
SYMBOL
VDD
VOUT
TA
CONDITIONS
Operating
ï® ELECTRICAL CHARACTERISTICS (TA=25°C)
MIN
TYP
MAX UNIT
2.4
2.7
5.5
V
-0.3
2.7
5.5
V
-40
25
85
°C
PARAMETER
Output Saturation Voltage
Output Leakage Current
Supply Current
Operating Time
Standby Time
Duty Cycle
Output Rise Time
Output Fall Time
SYMBOL
VSAT
IOFF
IDD(EN)
IDD(DIS)
IDD(AVG)
TOP
TSD
D.C.
tR
tF
CONDITIONS
VDD=2.7V
VDD=2.7V
VDD=2.7V
RL=2.7Kâ¦,CL=10PF
RL=2.7Kâ¦,CL=10PF
ï® MAGNETIC CHARACTERISTICS ( TA=25°C,VDD=2.7V)
MIN
TYP
MAX UNIT
0.1
V
0.01
μA
1.1
mA
2.5
μA
3
20
μA
50
μs
130
ms
0.04
%
0.5
1
μs
0.1
1
μs
PARAMETER
Operation Points
Release Points
Hysteresis
SYMBOL
|BOP|
|BRP|
|BOPâBRP|
MIN
20
12
2
TYP
35
27
8
MAX
50
42
16
UNIT
Gauss
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-608.C
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