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| UH8100_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – LOW POWER HALL EFFECT SWITCH | |||
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UH8100
CMOS IC
ï® ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Magnetic Flux Density
B
Unlimited
mT
Supply Voltage
VDD
7
V
Output Current
IO
10
mA
Package Power Dissipation
PD
230
mW
Junction Temperature
TJ
150
°C
Operation Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® RECOMMENDED OPERATING CONDITIONS (TA=25°C)
PARAMETER
SYMBOL
CONDITIONS
Supply Voltage
VDD
Operating
ï® ELECTRICAL CHARACTERISTICS (TA=25°C)
MIN TYP MAX UNIT
2.5
5.5 V
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNIT
Output On Voltage
Output Leakage Current
Supply Current
VOUT
IOFF
IDD(AVG)
VDD=3V, IOUT=1mA
VDD=3V, VOUT=5.5V, B<BRP
VDD=3V,
UH8100A
average supply current UH8100B
0.1 0.3 V
0.01 1
uA
5
10 uA
280 500 uA
Awake Time
Period
Duty Cycle
TAWAKE
TPERIOD
D.C.
VDD=3V
VDD=3V,UH8100A
VDD=3V,UH8100B
VDD=3V,UH8100A
VDD=3V,UH8100B
50 100 us
50 100 ms
200 400 us
0.1
%
25
%
ï® MAGNETIC CHARACTERISTICS ( TA=25°C, VDD=3V)
PARAMETER
Operation Points
Release Points
Hysteresis
SYMBOL
|BOP|
|BRP|
|BOPâBRP|
MIN
10
TYP
MAX
UNIT
40
60
30
Gauss
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-413.E
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