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| UFZ34 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 28A, 60V N-CHANNEL POWER MOSFET | |||
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UFZ34
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=17A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=48V, ID=17A
(Note 4)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=17A, RG=13â¦,
RD=1.8⦠(Note 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
Drain-Source Diode Forward Voltage
(Note 2)
VSD
TJ=25°C, IS=17A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
(Note 2)
tRR
TJ=25°C, IF=17A,
QRR
di/dt=100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible
tON
(turn-on is dominated by LS+LD)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse widthâ¤300µs, Duty cycleâ¤2%.
TYP MAX UNIT
V
25 µA
+100 nA
-100 nA
4.0 V
0.042 â¦
680
pF
220
pF
80
pF
30 nC
6.7 nC
12 nC
5.1
ns
30
ns
22
ns
30
ns
28 A
100 A
1.3 V
63 95 ns
130 200 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-900-.a
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