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| UF830_15 Datasheet, PDF (3/9 Pages) Unisonic Technologies – N-CHANNEL MOSFET ARRAY FOR SWITCHING | |||
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UF830
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
Drain to Gate Voltage (RGS=20kâ¦, TJ=25°C ~125°C)
VDS
VDGR
500
V
500
V
Gate to Source Voltage
VGS
Drain Current
Continuous
Pulsed
ID
IDM
TO-220/TO-262/TO-263
±30
V
4.5
A
18
A
73
W
Power Dissipation
(TC = 25°C)
TO-220F/ TO-220F1
TO-220F2
TO-251/TO-251S
PD
TO-252
38
W
40
46
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25â¦, peak IAS=4.5A
ï® THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
Junction to Ambient
TO-220F2
TO-251/TO-251S
TO-252
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252
SYMBOL
θJA
θJc
RATINGS
62.5
62.5
62.5
100.3
1.71
3.31
3.125
2.7
ï® ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
On-State Drain Current (Note 1)
ID(ON)
VDS>ID(ON)ÃRDS(ON)MAX, VGS=10V 4.5
Drain-Source Leakage Current
VDS= Rated BVDSS, VGS=0V
IDSS
VDS=0.8ÃRated BVDSS
VGS=0V, TJ= 125°C
Gate-Source Leakage Current
IGSS
VGS=±30V
Static Drain-Source On-State Resistance RDS(ON) ID=2.5A, VGS=10V (Note 2)
Forward Transconductance (Note 1)
gFS
VDSâ¥10V, ID=2.7A
2.5
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=250V, IDâ4.5A
RGS=12â¦, RL =54⦠(Note 2)
Turn-Off Fall Time
tF
Notes: 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±100 nA
1.3 1.5 â¦
4.2
S
10 17 ns
15 23 ns
33 53 ns
16 23 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R502-046.I
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