UF830-F Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

UF830-F
Power MOSFET
 ELECTRICAL SPECIFICATIONS(Cont.) (T_A =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Total Gate Charge
Q_G
V_GS=10V, I_D=1.3A
Gate-Source Charge
Q_GS
V_DS=0.8×Rated BV_DSS
Gate-Drain Charge
Q_GD
I_G(REF)=100μA (Note 3)
Input Capacitance
C_ISS
Output Capacitance
C_OSS
V_DS=25V, V_GS=0V, f=1.0MHz
Reverse Transfer Capacitance
C_RSS
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
 INTERNAL PACKAGE INDUCTANCE
TYP
21
5.2
5.6
600
78
15
MAX UNIT
30 nC
nC
nC
pF
pF
pF
PARAMETER
SYMBOL MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
L_D
3.5
nH
4.5
nH
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L_S
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
 SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
V_SD
T_J=25°C,I_SD=4.5A, V_GS=0V(Note 1)
I_SD
I_SDM
Note 2
t_rr
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 180
Reverse Recovery Charge
Q_RR
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 0.96
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX
1.6
5.5
18
760
4.3
UNIT
V
A
A
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A94.B