UF740_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

UF740
Power MOSFET
 ELECTRICAL CHARACTERISTICS (T_C =25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain to Source Breakdown Voltage BV_DSS V_GS = 0V, I_D = 250μA
400
V
Gate to Threshold Voltage
V_GS(THR) V_GS = V_DS, I_D = 250μA
2.0
4.0 V
On-State Drain Current (Note 1)
I_D(ON) V_DS >I_D(ON) x R_DS(ON)MAX, V_GS =10V
10
A
Zero Gate Voltage Drain Current
V_DS = Rated BV_DSS, V_GS = 0V
I_DSS V_DS=0.8 x Rated BV_DSS,
V _GS =0V,T _J =125°C
25 μA
250 μA
Gate to Source Leakage Current
I_GSS V_GS = ±20V
±500 nA
Drain to Source On Resistance
R_DS(ON) V_GS = 10V, I_D = 5.2A (Note 1)
0.38 0.55 Ω
Forward Transconductance
g_FS V_DS ≥ 50V, I_D = 5.2A (Note 1)
5.8 8.9
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_{DLY(ON) VDD = 200V, ID ≈ 10A,}
t_R R_GS = 9.1Ω, R_L = 20Ω, V_GS = 10V
t_DLY(OFF) MOSFET Switching Times are Essentially
t_F ^{Independent of Operating Temperature}
65 75 ns
130 145 ns
240 260 ns
145 155 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q _G(TOT)
V_GS = 10V, I_D = 10A, I_G(REF) = 1.5mA,
V_DS = 0.8 x Rated BV_DSS
138
nC
Gate to Source Charge
Q_GS Gate Charge is Essentially Independent of
35
nC
Gate to Drain “Miller” Charge
Q_GD Operating Temperature
35
nC
Input Capacitance
C _ISS
1170
pF
Output Capacitance
C_OSS V_GS = 0V, V_DS =25V, f = 1.0MHz
160
pF
Reverse - Transfer Capacitance
C _RSS
26
pF
Measured From Modified MOSFET
the Contact Screw Symbol Showing the
on Tab to Center Internal Devices
3.5
nH
of Die
Inductances
Internal Drain Inductance
L_D Measured From
the Drain Lead,
D
6mm (0.25in)
From Package to
4.5
nH
L_D
Center of Die
Measured From ^G
L_S
the Source Lead,
Internal Source Inductance
6mm (0.25in)
L_{S From Header to}
S
7.5
nH
Source Bonding
Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
Continuous Source to Drain Current
V_SD T_J = 25°C, I_SD = 10A, V_GS = 0V (Note 1)
I_S Modified MOSFET
D
Symbol Showing
2.0 V
10 A
the Integral
Pulse Source to Drain Current
(Note 2)
I _SM
Reverse P-N
Junction Diode
G
40 A
S
Reverse Recovery Time
t_rr T_J = 25°C, I_SD = 10A, dI_SD/dt = 100A/μs
Reverse Recovery Charge
Q_RR T_J = 25°C, I_SD = 10A, dI_SD/dt = 100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. V_DD=50V, starting T_J =25°C, L=9.1mH, R_G=25Ω, peak I_AS = 10A
170 390 790 ns
1.6 4.5 8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-078. G