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| UF740-E Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL FAST SWITCHING MOSFET | |||
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UF740-E
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain âMillerâ Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
Internal Drain Inductance
BVDSS VGS = 0V, ID = 250μA
400
V
VGS(THR) VGS = VDS, ID = 250μA
2.0
4.0 V
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V
10
A
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C
25 μA
250 μA
IGSS VGS = ±20V
±500 nA
RDS(ON) VGS = 10V, ID = 5.2A (Note 1)
0.47 0.55 â¦
gFS VDS ⥠50V, ID = 5.2A (Note 1)
5.8 8.9
S
tDLY(ON)
tR
tDLY(OFF)
tF
VDD = 200V, ID â 10A,
RGS = 9.1â¦, RL = 20â¦, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
45 55 ns
65 75 ns
150 180 ns
70 85 ns
QG(TOT)
QGS
QGD
VGS = 10V, ID = 10A, IG(REF) = 1.5mA,
VDS = 0.8 x Rated BVDSS
Gate Charge is Essentially Independent of
Operating Temperature
100 120 nC
10
nC
20
nC
CISS
1225
pF
COSS VGS = 0V, VDS =25V, f = 1.0MHz
300
pF
CRSS
80
pF
Measured From Modified MOSFET
the Contact Screw Symbol Showing the
on Tab to Center Internal Devices
3.5
nH
of Die
Inductances
LD Measured From
the Drain Lead,
6mm (0.25in)
4.5
nH
From Package to
Center of Die
Internal Source Inductance
Measured From
the Source Lead,
LS
6mm (0.25in)
From Header to
Source Bonding
Pad
7.5
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1)
Continuous Source to Drain Current
IS Modified MOSFET
Symbol Showing
the Integral
Pulse Source to Drain Current
(Note 2)
ISM
Reverse P-N
Junction Diode
2.0 V
10 A
40 A
Reverse Recovery Time
trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty Cycleâ¤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25â¦, peak IAS = 10A
170 390 790 ns
1.6 4.5 8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-966. A
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