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| UF730_10 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET | |||
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UF730
 ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, ISD = 5.5A,
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR
ISD = 5.5A, dISD/dt = 100A/μs
QRR
(Note 3)
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 â¦, Starting TJ = 25°C
3. Pulse Test: Pulse width ⤠300μs, Duty cycle ⤠2%
4. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.6 V
5.5 A
22 A
140 300 660 ns
0.93 2.1 4.3 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-077.E
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