UF624 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 4.4 A, 250 V N-CHANNEL POWER MOSFET

UF624
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS I_D=250µA, V_GS=0V
250
V
Breakdown Voltage Temperature
Coefficient
△BV_DSS/△T_J Reference to 25°C, I_D=1mA
0.36
V/°C
Drain-Source Leakage Current
I_DSS
V_DS=250V, V_GS=0V
V_DS=200V, V_GS=0V , T_J=125°C
25 µA
250 µA
Gate-Source Leakage Current
I_GSS
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
±10 µA
±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
2.0
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON) V_GS=10V, I_D=2.6A (Note 2)
1.1 Ω
Forward Transconductance
g_FS
V_DS=50V, I_D=2.6A (Note 2)
1.5
S
DYNAMIC PARAMETERS
Input Capacitance
C_ISS
260
pF
Output Capacitance
C_OSS
V_GS=0V, V_DS=25V, f=1.0MHz
77
pF
Reverse Transfer Capacitance
C_RSS
15
pF
SWITCHING PARAMETERS
Total Gate Charge
Q_G
14 nC
Gate to Source Charge
Q_GS
V_GS=10V, V_DS=200V, I_D=4.4A
2.7 nC
Gate to Drain Charge
Q_GD
7.8 nC
Turn-ON Delay Time
t_D(ON)
7.0
ns
Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=125V, I_D=4.4A, R_G=18Ω,
R_D=28Ω
13
ns
20
ns
Fall-Time
t_F
12
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
4.4 A
Maximum Body-Diode Pulsed Current
(Note 1)
I_SM
14 A
Drain-Source Diode Forward Voltage
V_SD
T_J=25°C, I_S=4.4A, V_GS=0V (Note
2)
1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_RR
T_J=25°C, I_F=4.4A, dI/dt=100A/µs
Q_RR
(Note 2)
200 400 ns
0.93 1.9 µC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by
t_ON
L_S and L_D)
Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-855.a