UF601Q Datasheet, PDF (3/3 Pages) Unisonic Technologies – N-CHANNEL DEPLETION-MODE POWER MOSFET

UF601Q
 TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
00
200
400 600 800 1000
Drain-Source Breakdown Voltage, BV_DSS (V)
Drain Current vs. Source to Drain Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, V_SD (V)
Power MOSFET
Drain-Source On-State Resistance
Characteristics
3.5
3.0
V_GS=0V, I_D=3mA
2.5
2.0
1.5
1.0
0.5
0
0 200 400 600 800 1000
Drain to Source Voltage, V_DS (mV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A25.C