UD4606 Datasheet, PDF (3/9 Pages) Unisonic Technologies – DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL)

UD4606
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_A = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note2)
Pulsed Drain Current (Note2)
Power Dissipation
Junction Temperature
Storage Temperature
DIP-8
SOP-8
SYMBOL
V_DSS
V_GSS
I_D
I_DM
P_D
T_J
T_STG
RATINGS
30
±20
6.9
30
2.5
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
W
°С
°С
P-CHANNEL
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
-30
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current (Note 2)
I_D
-6
A
Pulsed Drain Current (Note 2)
I_DM
-30
A
Power Dissipation
DIP-8
SOP-8
P_D
2.5
W
2
W
Junction Temperature
T_J
+150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in ² pad area, t≤10sec
„ THERMAL DATA
PARAMETER
Junction to Ambient (Note)
DIP-8
SOP-8
Note: Surface Mounted on 1in ² pad area, t≤10sec
SYMBOL MIN
θ_JA
TYP
74
67
MAX
110
80
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-144.C