MMDT3946_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

MMDT3946
DUAL TRANSISTOR
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified.)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V_CBO
V_CEO
I_C=10A, I_E=0
I_C=1mA, I_B=0 (Note)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V_EBO
I_CEX
I_E=10A, I_C=0
V_CE=30V, V_EB=3V
Base Cutoff Current
ON CHARACTERISTICS (Note)
I_BL
V_CE=30V, V_EB=3V
h_FE1
h_FE2
V_CE=1V, I_C=0.1mA
V_CE=1V, I_C=1mA
DC Current Gain
h_FE3
h_FE4
V_CE=1V, I_C=10mA
V_CE=1V, I_C=50mA
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage (Note)
h_FE5
V_CE(SAT)1
V_CE(SAT)2
V_BE(SAT)1
V_BE(SAT)2
V_CE=1V, I_C=100mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
C_OB V_CB=5V, I_E=0, f=1MHz
f_T
V_CE=20V, I_C=10mA, f=100MHz
SWITCHING CHARACTERISTICS
Turn On Time
t_ON V_CC=3V,V_BE=0.5V,I_C=10mA,I_B1=1mA
Turn Off Time
t_OFF
Note: Pulse test: P_W ≤ 300μs, Duty Cycle ≤ 2.0%
I_B1=1_B2=1mA
MIN
60
40
6
40
70
100
60
30
0.65
300
TYP MAX UNIT
V
V
V
50 nA
50 nA
300
0.2
0.3
V
0.85
0.95
V
4 pF
MHz
70 ns
250 ns
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V_CBO I_C=-10A,I_E=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V_CEO
V_EBO
I_C=-1mA, I_B=0
I_E=-10A, I_C=0
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 1)
I_CEX V_CE=-30V, V_EB=-3V
I_BL
V_CE=-30V, V_EB=-3V
h_FE1 V_CE=-1V, I_C=-0.1mA
DC Current Gain
h_FE2 V_CE=-1V, I_C=-1mA
h_FE3 V_CE=-1V, I_C=-10mA
h_FE4 V_CE=-1V, I_C=-50mA
h_FE5 V_CE=-1V, I_C=-100mA
Collector-Emitter Saturation Voltage (Note)
V_CE(SAT)1
V_CE(SAT)2
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
Base-Emitter Saturation Voltage
V_BE(SAT)1 I_C=-10mA, I_B=-1mA
V_BE(SAT)2 I_C=-50mA, I_B=-5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C_ob V_CB=-5V,I_E=0, f=1MHz
Transition Voltage
f_T
V_CE=-20V, I_C=-10mA, f=100MHz
SWITCHING CHARACTERISTICS
Turn on Time
Turn off Time
t_ON
V_CC=-3V, V_BE=-0.5V, I_C=-10mA,
I_B1=-1mA
t_OFF I_B1=1_B2=-1mA
Note: Pulse test: P_W ≤ 300μs, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-40
V
-40
V
-5
V
-50 nA
-50 nA
60
80
100
60
30
-0.65
300
-0.25
-0.4
V
-0.85
-0.95
V
4.5 pF
250
MHz
70 ns
300 ns
3 of 4
QW-R218-015.C