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| MMDT3906 Datasheet, PDF (3/4 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMDT3906
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
625
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10 µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=-1.0mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
Collector Cutoff Current
ICEX VCB= -30V, VEB(OFF)=-3.0V
Base Cutoff Current
ON Characteristics (Note)
IBL
VEB=-30V, VEB(OFF)=-3.0V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
hFE
VCE(SAT)
VBE(SAT)
IC=-100μA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-50mA, VCE=-1.0V
IC=-100mA, VCE=-1.0V
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
Switching Characteristics
COBO
CIBO
hIE
hRE
hFE
hOE
fT
NF
VCB=-5.0V, IE=0, f=1.0MHz
VEB=-0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=-20V, IC=-10mA, f=100MHz
VCE=-5.0V, IC=-100μA,
RS=1.0kâ¦, f=1.0kHz
Delay Time
tD
VCC=-3.0V, IC= -10mA,
Rise Time
tR
VBE(OFF)=0.5V, IB1= -1.0mA
Storage Time
tS
VCC=-3.0V, IC= -10mA,
Fall Time
tF
IB1= IB2=-1.0mA
Note: Short duration pulse test used to minimize self-heating effect.
MIN TYP MAX UNIT
-40
V
-40
V
-5.0
V
-50 nA
-50 nA
60
80
100
60
30
-0.65
300
-0.25 V
-0.40 V
-0.85 V
-0.95 V
4.5 pF
10 pF
2.0
12 kâ¦
0.1
10 Ã10-4
100
400
3.0
60 μS
250
MHz
4.0 dB
35 ns
35 ns
225 ns
75 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R218-014.a
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