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| MMBTA92 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP high-voltage transistor | |||
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MMBTA92
TYPICAL CHARACTERISTICS
DC Current Gain
103
VCE=-10V
102
101
100
-100
-101
-102
-103 -104
Collector Current, IC (mA)
Capacitance
102
CIB
101
CCB
-10-1
-100
-101
-102
Collector-Base Voltage(V)
Current Gain Bandwidth Product
103
VCE=-20V
f=100MHz
102
PNP SILICON TRANSISTOR
Saturation Voltage
-104
IC=10*IB
VCE(SAT)
-103
VBE(SAT)
-102
-101
-100
-101
-102
-103 -104
Collector Current, IC (mA)
Active-Region Safe Operating Area
-103
-102
-101
625mW Thermal
limitation Ta=25Â¥
bonding breakdown
-100 limitation T J=150Â¥
-100
-101
-102
-103
Collector-Emitter Voltage (V)
101
-100
-101
-102
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-005,B
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