MMBTA43_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

MMBTA42/43
 TYPICAL CHARACTERISTICS
DC Current Gain vs. Output Current
1K _VCE=5V
500
Ta=150°C
200
Ta=25°C
100
Ta=-50°C
50
20
10
5
2
1
1
2 5 10 20 50 100 200 500
Collector Current, I_C (mA)
Collector Emitter Saturation vs.
2.0
Collector Current
1.8 ^IC/IB=10
1.6
1.4
1.2
1.0
Ta=150°C
0.8
0.6
Ta=25°C
0.4
0.2
0.0
12
Ta=-50°C
5 10 20 50 100 200 500
Collector Current, I_C (mA)
Current Gain Bandwidth Product
1000.0
V_CE=5V
100.0
Ta=25°C
10.0
2 4 6 8 10 12 14 16 18 20
Collector Current, I_C (mA)
NPN SILICON TRANSISTOR
DC Current Gain vs. Output Current
1K
V_CE=10V
500
Ta=150℃
Ta=25℃
200
100
Ta=-50℃
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
Collector Current, I_C (mA)
Collector Emitter Saturation vs.
1.0 _VCE=5V
0.9
Collector Current
0.8
Ta=-50°C
0.7
0.6
0.5
Ta=25°C
0.4
0.3
0.2
Ta=150°C
0.1
0.0
0.1
1
10
100
Collector Current, I_C (mA)
Power Derating Power Dissipation
vs. Case Temperature
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Case Temperature, T_C (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-004.G