MMBT1015_11 Datasheet, PDF (3/5 Pages) Unisonic Technologies – LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

MMBT1015
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING ( T_A=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
SOT-23
250
Collector Dissipation SOT-523/SOT-113/SOT-323
PC
200
mW
SOT-723
190
Collector Current
IC
-150
mA
Base Current
IB
-50
mA
Junction Temperature
Storage Temperature
T_J
T_STG
125
℃
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
COB
NF
TEST CONDITIONS
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -10μA, IC = 0
IC = -100mA, IB = -10mA
IC = -100mA, IB = -10mA
VCB = -50V, IE = 0
VEB = -5V, IC = 0
VCE = -6V, IC = -2mA
VCE = -6V, IC = -150mA
VCE = -10V, IC = -1mA
VCB = -10V, IE = 0, f = 1MHz
IC = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 -0.3 V
-1.1 V
-100 nA
-100 nA
120
700
25
80
MHz
4.0 7.0 pF
0.5 6 dB
„ CLASSIFICATION OF h_FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-015,G