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| MJE13005-H Datasheet, PDF (3/8 Pages) Unisonic Technologies – NPN SILICON POWER TRANSISTORS | |||
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MJE13005-H
NPN SILICON TRANSISTOR
ï® ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
400
Collector Cutoff Current
VCBO=Rated Value,
ICBO
VBE(OFF)=1.5V
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
Emitter Cutoff Current
IEBO VEB=9V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
IS/B
Clamped Inductive SOA with Base
Reverse Biased
RBSOA
ON CHARACTERISTICS (Note 1)
hFE1 IC=0.5A, VCE=5V
15
DC Current Gain
hFE2 IC=1A, VCE=5V
10
hFE3 IC=2A, VCE=5V
8
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Ta=100°С
Base-Emitter Saturation Voltage
IC=1A, IB=0.2A
VBE (SAT) IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
IC=500mA, VCE=10V, f=1MHz
4
COB VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR
VCC=125V, IC=2A, IB1=IB2=0.4A,
Storage Time
tS
tP=25μs, Duty Cycleâ¤1%
Fall Time
tF
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycleâ¤10%
Note: 2. Pulse Test: PW=300μs, Duty Cycleâ¤2%
ï® CLASSIFICATION OF hFE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
TYP MAX UNIT
V
1
mA
5
1 mA
See Fig. 11
See Fig. 12
50
60
40
0.5 V
0.6 V
1
V
1
V
1.2 V
1.6 V
1.5 V
MHz
65
pF
0.025 0.1 μs
0.3 0.7 μs
1.7
4
μs
0.4 0.9 μs
E
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R221-024.a
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