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| BU406 Datasheet, PDF (3/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
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BU406
 TYPICAL CHARACTERISTICS
NPN PLANAR TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
IC = 10IB
1000
VBE(SAT)
1000
Collector Output Capacitance
f = 1MHz
100
100
VCE(SAT)
10
0
10 100 1000 10000
Collector Current, IC (mA)
Safe Operating Area
IC Max. (Pulsed)
10 IC Max. (Continuous)
1
0.1
1
10
100
Collector-Base Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
1
1
10
100
Collector-Base Voltage, VCB (V)
Power Derating
80
70
60
50
40
TO-220
30
20
10
0
0 25 50 75 100 125 150 175 200
Case Temperature, TC (°C)
3 of 4
QW-R203-021,D
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