BAS85 Datasheet, PDF (3/3 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
 TYPICAL CHARACTERISTICS
Admissible Powerv Dissipation vs.
Ambient Temperature
200
100
0
100
200
Ambient temperature, T_A (°C)
1000
Typical Reverse Characteristics
100
T_J=125°C
T_J=100°C
10
T_J=75°C
1
T_J=50°C
T_J=25°C
0.1
0.01
05
10 15 20 25 30
Reverse voltage, V_R (V)
DIODE
1000
Typical Instantaneous Forword
Characteristics
100
T_J=125°C
T_J=25°C
10
1
T_J=-40°C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage, V_F (V)
Typical Junction Capacitance
14
12
10
8
6
4
2
0
5 10 15 20 25 30
Reverse voltage, V_R (V)
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QW-R202-015.B