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| 9N50 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 9A, 500V N-CHANNEL POWER MOSFET | |||
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9N50
Preliminary
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
VDS=400V, TC=125°C
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=4.5A
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=400V, ID=9A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=250V, ID=9A, RG=25â¦
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=9A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=9A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 1)
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
1 µA
10
+100 nA
-100 nA
2.0
4.0 V
0.7 0.85 â¦
790 1030 pF
130 170 pF
24 30 pF
28 35 nC
4
nC
15
nC
18 45 ns
65 140 ns
93 195 ns
64 125 ns
9A
36 A
1.4 V
335
ns
2.95
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-522.b
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