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| 9N40 Datasheet, PDF (3/4 Pages) Unisonic Technologies – 9A, 400V N-CHANNEL POWER MOSFET | |||
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9N40
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=320V, ID=9A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=9A, RG=25â¦
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=9A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=9A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 1)
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
400
V
1 µA
+100 nA
-100 nA
2.0
4.0 V
0.6 0.75 â¦
1340
pF
160
pF
490
pF
34
nC
18
nC
16
nC
22
ns
60
ns
32
ns
140
ns
9A
36 A
1.7 V
350
ns
2.6
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-552.c
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