7N10_15 Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

7N10
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
Gate-Source Voltage
V_DSS
100
V
V_GSS
±25
V
Continuous Drain Current
T_C =25°C
T_C = 70°C
I_D
I_D
Pulsed Drain Current (Note 2)
I_DM
7
A
6.8
A
16
A
Avalanche Current (Note 2)
I_AR
7
A
Repetitive Avalanche Energy (Note 2)
E_AR
0.2
mJ
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
E_AS
dv/dt
50
mJ
6.0
V/ns
SOT-223
2.0
Power Dissipation
TO-251/TO-252
TO-252D
SOT-223
P_D
2.5
W
0.016
Derate above 25°C
TO-251/TO-252
TO-252D
0.02
W/°C
Operating Junction Temperature
T_J
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, I_AS =1.7A, V_DD =25V, R_G =25Ω Starting T_J =25°C
4. I_SD ≤7.3A, di/dt ≤300A/μs, V_DD ≤BV_DSS, Starting T_J =25°C
 THERMAL DATA
PARAMETER
SYMBOL
SOT-223
Junction to Ambient
TO-251/TO-252
θ_JA
TO-252D
SOT-223
Junction to Case
TO-251/TO-252
θ_JC
TO-252D
Note: When mounted on the minimum pad size recommended (PCB Mount)
RATINGS
62.5
50
12
7.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-394.J