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6N90 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET
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6N90
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.1A
Forward Transconductance
DYNAMIC PARAMETERS
gFS
VDS=50V, ID=3.1A (Note 4)
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=720V, ID=6.2A
(Note 4, 5)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=450V, ID=6.2A, RG=25Ω
(Note 4, 5)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=6.2A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=6.2A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 4)
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
MIN TYP MAX UNIT
900
V
1.07
V/°C
10 µA
100
+100 nA
-100 nA
3.0
5.0 V
1.93 2.3 Ω
5.5
S
1360 1770 pF
110 145 pF
11 15 pF
30 40 nC
9.0
nC
12
nC
35 80 ns
90 190 ns
55 120 ns
60 130 ns
6.0 A
24 A
1.4 V
630
ns
6.9
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-492.a
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