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| 6N70 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 6.0A, 700V N-CHANNEL POWER MOSFET | |||
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6N70
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID=250µA
700
0.79
V
V/°C
Drain-Source Leakage Current
IDSS
VDS=700V
VDS=560V, TC=125°C
25 µA
250 µA
Gate-Source
Forward
Leakage Current Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
+100 nA
-100 nA
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA, VDS=5V 2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A (Note 1)
1.6 1.8 â¦
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz (Note 1, 2)
920 1200 pF
100 115 pF
45 55 pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=560V,
ID=6A (Note 1, 2)
51 67 nC
8.3
nC
23.1
nC
Turn-ON Delay Time
tD(ON)
18 45 ns
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=350V, ID=6A,
RG=11.5â¦
23 55 ns
76 160 ns
Fall-Time
tF
26 60 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note 3)
IS
Integral reverse pn-diode in
ISM
the MOSFET
6A
24 A
Drain-Source Diode Forward Voltage
(Note 2)
VSD
IS=6A, VGS=0V, TJ = 25°C
1.4 V
Body Diode Reverse Recovery Time
trr
IF=6A, dIF/dt=100A/µs,
Body Diode Reverse Recovery Charge
QRR
TJ = 25°C
Notes: 1. Pulse Test: Pulse width ⤠250µs, Duty cycle ⤠2%
440
ns
4.05
µC
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-710.a
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