6N60Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 6.2A, 600V N-CHANNEL POWER MOSFET

6N60Z
Preliminary
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_S = 6.2 A
Maximum Continuous Drain-Source Diode
Forward Current
I_S
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
Reverse Recovery Time
Reverse Recovery Charge
t_rr
V_GS = 0 V, I_S = 6.2 A,
Q_RR
dI_F/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4 V
6.2 A
24.8 A
290
ns
2.35
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-741.a