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| 6N40_1109 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 6A, 400V N-CHANNEL POWER MOSFET | |||
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6N40
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
ÎBVDSS/ÎTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=3A
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=320V, VGS=10V, ID=6A
(Note 1,2)
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=6A, RG=25â¦
(Note 1,2)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
VGS=0V, IS=6A,
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width ⤠300μs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
400
V
0.54
V/°C
1 µA
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.8 1 â¦
480 625 pF
80 105 pF
15 20 pF
16 20 nC
2.3
nC
8.2
nC
13 35 ns
65 140 ns
21 55 ns
38 85 ns
6A
24 A
1.4 V
230
ns
1.7
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-487.d
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