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| 6N40K-TA Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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6N40K-TA
Preliminary
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
400
Breakdown Voltage Temperature Coefficient
âBVDSS/âTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25â¦
VGS=10V (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
VGS=0V, IS=6A, VR=50V
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width ⤠300μs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
TYP MAX UNIT
V
0.54
V/°C
1 µA
10 µA
+100 nA
-100 nA
4.0 V
0.6 â¦
490
pF
95
pF
8.4
pF
65
nC
6.2
nC
8.8
nC
60
ns
65
ns
105
ns
44
ns
6
A
24 A
1.4 V
300
ns
1.75
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R205-052.a
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