60N75 Datasheet, PDF (3/8 Pages) Unisonic Technologies – 60Amps, 75Volts N-CHANNEL POWER MOSTFET

60N75
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V_SD I_S = 48A, V_GS = 0 V
Continuous Source Current
I_S
Pulsed Source Current
I_SM
Reverse Recovery Time
Reverse Recovery Charge
t_RR I_S = 48A, V_GS = 0 V
Q_RR dIF / dt = 100 A/µs
Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=0.24mH, I_AS=48A, V_DD = 50V, R_G=20Ω, Starting T_J=25Ċ
3. I_SD≤48A, di/dt≤300A/µs, V_DD≤BV_DSS, Starting T_J=25Ċ
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
1.4
V
75
A
300
90
ns
300
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-112.A