60N08 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 60 Amps, 80 Volts N-CHANNEL POWER MOSFET

60N08
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS=0V, I_D=250µA
80
V
Breakdown Voltage Temperature Coefficient
ΔBV_DSS/ΔT_J I_D=250μA,Referenced to 25°C
0.07
V/°C
Drain-Source Leakage Current
I_DSS
V_DS=80V, V_GS=0V
V_DS=64V, T_C=150°C
1 µA
10 µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
I_GSS
V_DS=0V ,V_GS=+25V
V_DS=0V ,V_GS=-25V
+100 nA
-100 nA
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
2.0
4.0 V
Drain-Source On-State Resistance
R_DS(ON) V_GS=10V, I_D=30A
0.018 0.024 Ω
Forward Transconductance
DYNAMIC PARAMETERS
g_FS V_DS=30V, I_D=30A (Note 4)
31
S
Input Capacitance
Output Capacitance
C_ISS
C_OSS
V_DS=25V,V_GS=0V,f=1.0MHz
1450 1900 pF
520 680 pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C_RSS
120 155 pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
V_DS=64V, V_GS=10V, I_D=60A
(Note 4,5)
Q_GD
50 65 nC
9.3
nC
25
nC
Turn-ON Delay Time
t_D(ON)
16.5 45 ns
Turn-ON Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=40V, I_D=60A,
R_G=25Ω (Note 4,5)
200 410 ns
70 150 ns
Turn-OFF Fall Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
95 200 ns
Maximum Body-Diode Continuous Current
I_S
60 A
Maximum Body-Diode Pulsed Current
I_SM
176 A
Drain-Source Diode Forward Voltage
V_SD I_S =60A, V_GS=0V
1.5 V
Body Diode Reverse Recovery Time
t_RR
V_GS=0V, I_S=60A,
Body Diode Reverse Recovery Charge
Q_RR dIF/dt=100A/μs (Note 4)
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
73
ns
185
μC
2. L=0.4mH, I_AS=44A, V_DD=25V, R_G=25Ω, Starting T_J=25°C
3. I_SD ≤60A, di/dt ≤300A/μs, V_DD ≤BV_DSS, Starting T_J=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-521.a