4N70_15 Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

4N70
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
700
V
±30
V
4.4
A
4.4
A
17.6
A
260
mJ
10.6
mJ
4.5
V/ns
TO-220/TO-262
106
Power Dissipation
TO-220F/TO-220F1
P_D
36
W
TO-251/ TO-252
49
Junction Temperature
T_J
+150
°С
Operating Temperature
T_OPR
-55 ~ +150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, I_AS = 4.4A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD≤ 4.4A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-262
TO-251/ TO-252
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-251/ TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
1.18
3.47
2.55
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-340.G