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| 3N80_1108 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 3 Amps, 800 Volts N-CHANNEL POWER MOSFET | |||
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3N80
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
800
V
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
1 μA
Gate-Source Leakage Current
ON CHARACTERISTICS
IGSS
VGS=±30V, VDS=0V
±10 μA
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
3 3.75 4.5 V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.5A
3.2 4.2 â¦
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
gFS
VDS=15V, ID=1.5A
2.1
S
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
485
pF
57
pF
Reverse Transfer Capacitance
CRSS
11
pF
Equivalent Output Capacitance (Note 2)
COSS(EQ) VGS=0V, VDS=0V~640V
22
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
17
ns
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=400V, ID=3 A, RG=4.7â¦
VGS=10V
27
ns
36
ns
Turn-Off Fall Time
tF
40
ns
Total Gate Charge
Gate-Source Charge
QG
QGS
VDD=640V, ID=3A, VGS=10V
19
nC
3.2
nC
Gate-Drain Charge
QDD
10.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
2.5 A
Source-Drain Current (Pulsed)
ISDM
10 A
Reverse Recovery Current
IRRM
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
QRR
Note: 1.Pulse width=300μs, Duty cycleâ¦1.5%
ISD=3A, di/dt=100A/μs,
VDD=50V, TJ=25°C
8.4
A
384
ns
1600
nC
Note: 2.COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-283.E
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