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| 3N70A Datasheet, PDF (3/7 Pages) Unisonic Technologies – 700V, 3A N-CHANNEL POWER MOSFET | |||
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3N70A
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
Gate-Source Leakage Current Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID =250μA,Referenced to 25°C
ON CHARACTERISTICS
10 μA
100 nA
-100 nA
0.6
V/°С
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.5A
2.0
4.0 V
2.8 4.0 â¦
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f =
1MHz
350 450 pF
50 65 pF
5.5 32 pF
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 30V, ID = 1.0 A,
Turn-Off Delay Time
tD(OFF)
RG = 25⦠(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QDD
VDS= 480V,ID= 3.0A,
VGS= 10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
10 40 ns
30 70 ns
20 100 ns
30 70 ns
10 13 nC
2.7
nC
4.9
nC
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 3.0 A
IS
1.4 V
3.0 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12 A
Reverse Recovery Time
trr
VGS = 0 V, IS = 3.0 A,
Reverse Recovery Charge
QRR
dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse widthâ¤300μs, Duty cycleâ¤2%
210
ns
1.2
µC
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-620.A
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