3N65_15 Datasheet, PDF (3/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N65
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
650
V
Gate-Source Voltage
Avalanche Current (Note 2)
V_GSS
±30
V
I_AR
3.0
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
I_D
3.0
A
I_DM
12
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
200
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
TO-220F/TO-220F1
34
Power Dissipation
TO-251/TO-252/TO-251S
TO-251S2/TO-251S4
P_D
50
W
TO-126
17
DFN-8(5×6)
25
Junction Temperature
Operating Temperature
T_J
+150
°C
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, I_AS = 2.4A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤ 3.0A, di/dt ≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
SYMBOL
RATING
TO-220/TO-220F
TO-220F1
62.5
Junction to Ambient
TO-251/TO-252/TO-251S
TO-251S2/TO-251S4
θ_JA
110
TO-126
132
DFN-8(5×6)
75 (Note)
TO-220
1.67
TO-220F/TO-220F1
3.68
Junction to Case
TO-251/TO-252/TO-251S
TO-251S2/TO-251S4
θ_JC
2.5
TO-126
7.36
DFN-8(5×6)
5 (Note)
Note: The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-590.F