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| 3N60K Datasheet, PDF (3/8 Pages) Unisonic Technologies – 3A, 600V N-CHANNEL POWER MOSFET | |||
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3N60K
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ
ID = 250 μA,
Referenced to
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10 V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD = 300V, ID = 3.0 A,
RG = 25â¦
(Note 1, 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QDD
VDS= 480V,ID= 3.0A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
VGS = 0 V, IS = 3.0 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
600
V
10 μA
100 nA
-100 nA
0.6
V/°C
2.0
4.0 V
2.8 3.6 â¦
350 450 pF
50 65 pF
5.5 7.5 pF
10 30 ns
30 70 ns
20 50 ns
30 70 ns
10 13 nC
2.7
nC
4.9
nC
1.4 V
3.0 A
12 A
210
ns
1.2
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-838.A
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