3N40K-MK Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N40K-MK
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
400
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3
12
A
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
160
mJ
TO-220F/TO-220F1
TO-220F3
25
W
Power Dissipation
TO-220F2
P_D
TO-251/TO-251S
TO-252/TO-252D
26
W
50
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=35.6 mH, I_AS=3.0 A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤4.4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220F/TO-220F1/
Junction to Ambient
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
4.9
4.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R205-033.a