2SB1182 Datasheet, PDF (3/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Medium Power Transistor

2SB1182
■ TYPICAL CHARACTERICS
Static Characteristics
1.6
1.2
0.8
0.4
0
0
-IB=9mA
-IB=8mA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
4
8
12
16
20
-Collector-Emitter voltage (V)
Power Derating
12
8
4
0
-50
0
50
100
150
200
Case Temperature, Tc (℃)
Current Gain-
Bandwidth Product
3
10
VCE=5V
2
10
IB=8mA
1
10
0
10
-2
-1
0
1
10
10
10
10
Collector Current, Ic (A)
PNP SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
150
100
S/b _limited
50
0
-50
0
50
100
150
200
Case Temperature, Tc (℃)
Collector Output Capacitance
3
10
IE=0
f=1MHz
2
10
1
10
0
10
0
10
-1
10
-2
10
-3
10
-Collector-Base Voltage(v)
Safe Operating Area
1
Ic(max),Pulse
10
Ic(max),DC
10mS
1mS
0.1mS
0
10
-1
10
-2
10
0
1
2
10
10
10
Collector-Emitter Voltage
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R209-027.A