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| 2N90Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 2A, 900V N-CHANNEL POWER MOSFET | |||
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2N90Z
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ Reference to 25°C, ID=250µA
900
1.0
V
V/°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
10
µA
100
Forward
Gate- Source Leakage Current Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
5 µA
-5 µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
3.0
5.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.1A
5.6 7.2 â¦
Forward Transconductance
gFS
VDS=50V, ID=1.1A (Note 1)
2.0
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
390 500 pF
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
45 60 pF
Reverse Transfer Capacitance
CRSS
5.5 7.0 pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=720V, ID=2.2A
(Note 1,2)
QGD
12 15 nC
2.8
nC
6.1
nC
Turn-ON Delay Time
tD(ON)
15 40 ns
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=450V, ID=2.2A, RG=25â¦
(Note 1,2)
35 80 ns
20 50 ns
Fall-Time
tF
30 70 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.2 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.8 A
Drain-Source Diode Forward Voltage
VSD
IS=2.2A, VGS=0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=2.2A,VGS=0V,dIF/dt=100A/µs
400
ns
QRR
(Note 1)
1.6
µC
Note: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-848.A
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