2N60Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 2A, 600V N-CHANNEL POWER MOSFET

2N60Z
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_J =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250μA
600
V
Drain-Source Leakage Current
I_DSS
V_DS = 600V, V_GS = 0V
10 μA
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS = 20V, V_DS = 0V
V_GS = -20V, V_DS = 0V
Breakdown Voltage Temperature Coefficient △BV_DSS/△T_J I_D=250μA, Referenced to 25°C
5 μA
-5 μA
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS = V_GS, I_D = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON) V_GS = 10V, I_D =1A
3.6 5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
C_ISS
C_OSS
C_RSS
V_DS =25V, V_GS =0V,
f =1MHz
270 350 pF
40 50 pF
5 7 pF
Turn-On Delay Time
t_{D (ON)}
10 30 ns
Turn-On Rise Time
Turn-Off Delay Time
t_R
t_D(OFF)
V_DD =300V, I_D =2.4A,
R_G=25Ω (Note 1, 2)
25 60 ns
20 50 ns
Turn-Off Fall Time
t_F
25 60 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
Q_GD
V_DS=480V, V_GS=10V,
I_D=2.4A (Note 1, 2)
9.0 11 nC
1.6
nC
4.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_SD = 2.0 A
1.4 V
Continuous Drain-Source Current
I_SD
2.0 A
Pulsed Drain-Source Current
I_SM
8.0 A
Reverse Recovery Time
t_rr
V_GS = 0 V, I_SD = 2.4A,
Reverse Recovery Charge
Q_RR
di/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
180
ns
0.72
μC
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-829.B