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| 2N50 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 2 Amps, 500 Volts N-CHANNEL POWER MOSFET | |||
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2N50
Preliminary
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Gate- Source Leakage Current Forward
Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=400V, ID=2A
(Note 3, 4)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=250V, ID=2A, RG=25â¦
(Note 3, 4)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=2A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=2A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 3)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. ISD ⤠2A, di/dt ⤠200A/µs, VDD ⤠BVDSS, Starting TJ = 25°C
3. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
4. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
25 µA
+100 nA
-100 nA
2.0
4.0 V
3.1 5 â¦
236
pF
40
pF
22
pF
20 25 nC
2 3 nC
12 15 nC
10
ns
20
ns
60
ns
20
ns
2A
8A
1.2 V
300
ns
2.1
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-547.a
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