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| 22N60_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |||
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22N60
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Breakdown Voltage Temperature Coefficient
BVDSS VGS=0V, ID=250µA
IDSS
VDS=600V, VGS=0V
IGSS
VDS=0V, VGS=±30V
âBVDSS/âTJ ID=1mA,Referenced to 25°C
600
V
50 µA
±100 nA
0.30
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=13A (Note 4)
2.0
4.0 V
0.26 0.35 â¦
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
3570
pF
COSS VDS=25V, VGS=0V, f=1.0MHz
350
pF
CRSS
36
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=300V, ID=22A, RG=6.2â¦
VGS=10V (Note 4)
VDS=480V, VGS=10V,
ID=22A (Note 4)
160
ns
300
ns
900
ns
400
ns
500 nC
46 nC
170 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=22A
Continuous Source Current (Body Diode)
IS
(Note 1)
Pulsed Source Current (Body Diode)
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=22A, di/dt=100A/μs
QRR
(Note 4)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature
2. TJ = 25°C, L = 1.5mH, RG=25â¦, IAS = 22A
3. ISD ⤠22A, di/dt â¤540A/μs, VDD ⤠V(BR)DSS, TJ â¤150°C
4. Pulse Width ⤠300 s, Duty Cycle ⤠2%
1.5 V
22 A
88 A
590 890 ns
7.2 11 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-216.J
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